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2 edition of Dynamics of a semiconductor laser coupled to a dispersive external cavity found in the catalog.

Dynamics of a semiconductor laser coupled to a dispersive external cavity

Lora Ramunno

Dynamics of a semiconductor laser coupled to a dispersive external cavity

by Lora Ramunno

  • 162 Want to read
  • 6 Currently reading

Published .
Written in English

    Subjects:
  • Physics Theses

  • Edition Notes

    ContributionsSipe, John (supervisor)
    The Physical Object
    Paginationx, 189 p.
    Number of Pages189
    ID Numbers
    Open LibraryOL19499507M
    ISBN 100612747581

    In active media, laser light can be generated with versatile underlying dynamics. Emphasizing on ultrafast dynamics, the vital arena for the information technology, the soliton is a common conceptual keyword, thriving into its modern developments with the closely related . The third chapter considers single-mode semiconductor laser coupled to an external mirror. Light more» trapped for many round trips inside the external cavity is taken into account. Analytical expressions for the frequency and intensity fluctuation spectra, the laser linewidth and the modulation response are obtained.

    Semiconductor lasers or laser diodes play an important part in our everyday lives by providing cheap and compact-size lasers. They consist of complex multi-layer structures requiring nanometer scale accuracy and an elaborate design. Their theoretical description is important not only from a fundamental point of view, but also in order to generate new and improved designs. Internal and external dynamics of a strongly-coupled atom-cavity system Dissertation zur Erlangung des Doktorgrades (Dr. rer. nat.) der Mathematisch-Naturwissenschaftlichen Fakult at der Rheinischen Friedrich-Wilhelms-Universit at Bonn vorgelegt von Sebastian Reick aus Geldern Bonn

    the laser cavity, coated to yield % reflectivity which is sufficient to achieve lasing owing to the high gain in the diode medium. The cavity back-end features an external lines/mm diffraction grating (at Littrow incidence), which serves as a common, dispersive high reflector and . CHARACTERIZATION AND DEVELOPMENT OF AN EXTENDED CAVITY TUNABLE LASER DIODE by Fnu Traptilisa APPROVED FOR THE DEPARTMENT OF PHYSICS AND ASTRONOMY SAN JOSE STATE UNIVERSITY May Dr. Peter Beyersdorf Department of Physics and Astronomy Dr. Ramendra Bahuguna Department of Physics and Astronomy Dr. Kenneth Wharton Department of .


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Dynamics of a semiconductor laser coupled to a dispersive external cavity by Lora Ramunno Download PDF EPUB FB2

For some applications it is desirable to have a semiconductor laser whose wavelength can be tuned over a wide range, at least discretely. Coupled-cavity semiconductor lasers have the potential of offering mode selectivity together with wavelength by: 4.

Dynamics of external cavity semiconductor lasers is known to be a complex and uncontrollable phenomenon. Due to the lack of experimental studies on the nature of the external cavity semiconductor lasers, there is a need to theoretically clarify laser by: 3.

The time-delay treatment of OFB in semiconductor lasers is schematically shown in Fig. laser cavity of length L D, and front and back facet reflectivities of R f and R b, respectively, is coupled with an ultra-short external cavity of length L ex, refractive index n ex, and end-mirror reflectivity R output beam is assumed to travel several roundtrips in the external cavity due to Author: Moustafa Ahmed, Ahmed Bakry.

Laser diodes are also frequently used to optically pump other lasers with high efficiency. The highest power industrial laser diodes, with power up to 20 kW, are used in industry for cutting and welding.

External-cavity semiconductor lasers have a semiconductor active medium in a larger cavity. Nonlinear dynamics of two mutually injected external-cavity semiconductor lasers multiple quantum well (MQW) structure of the active region [41] G 1,2 = v ga N log[N 1,2(t)/N 0] 1+ε NLP 1,2(t), (4) where v g is the group velocity, α N is the gain coefficient and N 0 is.

Design of External Cavity Semiconductor Lasers to Suppress Wavelength Shift and Mode Hopping L. Zhao and Z. Fang Abstract – In this report, a model of external cavity semiconductor laser is built, and then based on this model a program is coded for simulating the thermally induced wavelength shift and mode hopping.

By comparing the simu-File Size: KB. @article{osti_, title = {Resonator modes and mode dynamics for an external cavity-coupled laser array}, author = {Nair, Niketh S. and Bochove, Erik J. and Aceves, Alejandro B.

and Zunoubi, Mohammad and Braiman, Yehuda}, abstractNote = {Employing a Fox-Li approach, we derived the cold-cavity mode structure and a coupled mode theory for a phased array of N single-transverse-mode active. N THE world of semiconductor lasers, coupled-cavity lasers are of interest for two reasons.

First, intention- ally coupled lasers have been demonstrated to exhibit sin- gle-longitudinal-mode oscillation under small-signal modulation, FM modulation capabilities, and bistable op- eration [ 11, [2].

Second, a coupled-cavity laser makes aFile Size: KB. The dynamic response of a semiconductor laser coupled to an external resonator is studied using the single-mode rate equations modified to account for the dispersive feedback.

Figure 7: Space diagram of semiconductor laser with two external cavities in space of ratios of their round trip times and pump parameter.

•1=•2 = 1. In conclusion, in this work we have studied complex dynamics in a semiconductor laser with one and two external cavities.

We have shown that dynamical states of the laser with one external cavity. T present, the external cavity semiconductor laser is a feasible means to realize a single-frequency semi- conductor laser. In order to develop its theory, an im- proved form of differential equations which describe the behavior of the external cavity semiconductor laser.

Longitudinal mode-switching dynamics in a dual external-cavity laser diode Article (PDF Available) in IEEE Journal of Quantum Electronics 36(4) - May with 26 Reads. We derive the modulation and noise properties of a semiconductor laser consisting of an active cavity loaded by a passive cavity.

The results indicate that under certain conditions the direct modulation bandwidth can be doubled with simultaneous phase noise reduction as compared to a conventional by: We observe experimentally and numerically novel mixed-mode dynamic states of a diode laser subject to two delayed optical feedbacks.

These states have been proposed and analyzed within the framework of the Lang–Kobayashi single-feedback model. Such states are combinations of two distinct external cavity modes and can be identified through a characteristic sequence of a Hopf bifurcation. The external cavity diode laser (ECDL) uses the LD chip as gain element and external reflectors as cavity mirrors, instead of the cleaved facets of LD chip.

The cavity length can then be extended for a longer photon lifetime; and the external reflector may have strong wavelength selectivity to suppress mode competition by: 7. External cavity semiconductor lasers are constructed from two main components: a standard Fabry-Perot injection laser used as a gain block, and an external cavity coupled to one of the lasers facets acting as a passive resonator.

The advantages of such an arrange- ment over a simple Fabry-Perot laser are that the static and dynamic linewidths. Advanced Search >. Home > Proceedings > Volume > Article Translator DisclaimerAuthor: Ali Ghiasi, Anand Gopinath.

We derive the modulation and noise properties of a semiconductor laser consisting of an active cavity loaded by a passive cavity. The results indicate that under certain conditions the direct modulation bandwidth can be doubled with simultaneous phase noise reduction as compared to a conventional laser.

This Letter is the first to report experimental bifurcation diagrams of an external-cavity semiconductor laser (ECSL) in the low-to-moderate current injection regime and long-cavity case.

Based on the bifurcation cascade behavior which was unveiled by Hohl and Gavrielides [Phys. Rev. Lett. 82, – ()], we present a detailed experimental investigation of the nonlinear dynamics of.

A simple mirror external cavity gave maximum threshold reduction (to the original threshold current) but the longitudinal mode spectrum was broad and unstable. By contrast, when a diffraction grating was used as the external reflector, the laser operated up to at least 'th in a single, A, instrument limited longitudinal mode which was Cited by: 6.

An active gain region sandwiched between a % reflective bottom Bragg mirror and an intermediate partially reflecting Bragg mirror is formed on a lower surface of a supporting substrate, to thereby provide the first (“active”) resonator cavity of a high power coupled cavity surface emitting laser device.

The reflectivity of the intermediate mirror is kept low enough so that laser Cited by: An external-cavity diode laser is a diode laser based on a laser diode chip which typically has one end anti-reflection coated, and the laser resonator is completed with, e.g., a collimating lens (or separate fast-axis and slow-axis beam collimators) and an external mirror as shown in Figure 1.Experimental and numerical study of the symbolic dynamics of a modulated external-cavity semiconductor laser Andres Aragoneses,´ 1,∗ Taciano Sorrentino,1,2 Sandro Perrone,1 Daniel J.

Gauthier,3 M. C. Torrent,1 and Cristina Masoller1 1Departament de F´ısica i Enginyeria Nuclear, Universitat Polite´cnica de Catalunya, Co Terrassa, Barcelona, Spain.